Probing Nanoscale Local Lattice Strains in Semiconductor Nanostructures and Devices by Transmission Electron Microscopy
نویسندگان
چکیده
منابع مشابه
Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.
This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2018
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927618005354